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| 1N4148/1N4448 Surface Mount Switching Diodes Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : DO-35 Glass Case *Weight : Approx 0.13 gram SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 100 VOLTS DO-35 DO-35 Outline Dimensions Unit:mm C D A B A A DIM DO-35 Min 26.0 Max Min - B Max 4.20 Min - C Max 0.55 Min - D Max 2.0 http//www.weitron.com.tw WEITRON 1N4148/1N4448 Maximum Ratings Characteristic Non-Repetitive Peak Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current (1) Non-Repetitive Peak Forward Surge Current @t=1.0us Power Dissipation Thermal Resistance Junction to Ambient Operating and Strorage Temperature Range ( TA=25 C Unless otherwise noted) Symbol VRM VPWM VRWM VR IO IFSM Pd R JA T J ,T S T G 1N4148/ 1N4448 100 75 150 2.0 500 300 -65 to +175 Unit V V mA A mW K/W C Electrical Characteristics Characteristic Reverse Breakdown Voltage IR= 100 ua Forward Voltage IF=10 mA 1N4148 1N4448 IF=5 mA IF=100 mA Leakage C urrent VR=20V VR=75V VR=75V, Tj=150 C Junction Capacitance Reverse Recovery Time IF=10 mA, IR=1mA, VR=6V, RL=100 ( TA=25 C Unless otherwise noted) Symbol V(BR)R Min 100 Max - Unit V VF 0.62 1.0 0.72 1.0 25 5 50 4 4 V IR - nA Cj Trr PF nS Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature. http//www.weitron.com.tw WEITRON 1N4148/1N4448 60 D.U.T. V R F =2V 2nF 5K VO nA 104 103 RECITIFICATION EFFICIENCY MEASUREMENT CIRCUIT 102 10 VR=20V 1 0 100 200 C FIG 1, LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE A 100 V =tp /T T =1/fp IFRM 10 n=0 0.1 tp IF R M T 1 0.2 0.5 0.1 10-4 10-3 10-2 10-4 tp 10-1 1 10S FIG 2, ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION http//www.weitron.com.tw WEITRON 1N4148/1N4448 mA 103 104 TJ=25 C f=1KHz 102 IF 10 TJ=100 C TJ=25 C TF 10 3 102 1 10-1 10-2 10 0 1 VF 2V 1 10-2 10-1 1 10 IF 102 mA FIG 3, FORWARD CHARACTERISTICS FIG 4, DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT mW 1000 900 800 Ptot 700 600 500 400 300 200 100 0 0 100 TA 200 C 1.1 TJ=25 C f=1MHz Ctot(VR) Ctot(DV) 1.0 0.9 0.8 0.7 0 2 4 6 8 VR 10 V FIG 5, ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG 6, RELATIVE CAPACITANCE VERSUS VOLTAGE http//www.weitron.com.tw WEITRON |
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